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ST 2SA952
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS
Value 30 25 5 700 150 600 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group M L K at -VCE = 1 V, -IC = 700 mA
Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter Voltage at -VCE = 6 V, -IC = 10 mA Gain Bandwidth Product at -VCE = 6 V, -IE = 10 mA Collector to Base Capacitance at -VCB = 6 V, f = 1 MHz
Symbol hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) -VBE fT COB
Min. 90 135 200 50 0.6 50 -
Max. 180 270 400 100 100 0.6 1.2 0.7 40
Unit nA nA V V V MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 24/05/2008
ST 2SA952
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 24/05/2008

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